savantic semiconductor product specification silicon pnp power transistors 2SB1192 d escription with to-220fa package high v c eo large p c complement to type 2sd1770 applications power amplifier tv vertical deflection output pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -200 v v ceo collector- emitter voltage open base -150 v v ebo emitter-base voltage open collector -6 v i c collector current -1 a i cm collector current-peak -2 a t a =25 2 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1192 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-5ma , b =0 -150 v v (br)ebo emitter- base breakdown voltage i e =-0.5ma ,i c =0 -6 v v cesat collector-emitter saturation voltage i c =-500ma; i b =-50ma -1.0 v v be base-emitter on voltage i c =-300ma ; v ce =-10v -1.0 v i cbo collector cut-off current v cb =-200v; i e =0 -50 a i ebo emitter cut-off current v eb =-4v; i c =0 -50 a h fe-1 dc current gain i c =-100ma ; v ce =-10v 60 240 h fe-2 dc current gain i c =-300ma ; v ce =-10v 50 c ob output capacitance i e =0 ; v cb =-10v,f=1mhz 35 pf f t transition frequency i c =-100ma ; v ce =-10v 20 mhz h fe-1 classifications q p 60-140 100-240
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1192 package outline fig.2 outline dimensions(unindicated tolerance: 0.15 mm)
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